aug.1998 90ds 19 19 19 4500 4500 2500 mitsubishi gate commutated turn-off thyristors FG4000HX-90DS high power inverter use press pack type FG4000HX-90DS outline drawing dimensions in mm application inverters, dc choppers, induction heaters, dc to dc converters. l i tqrm repetitive controllable on-state current ...........3000a l i t(av) average on-state current .....................1200a l v drm repetitive peak off state voltage ...................4500v l anode short type v rrm v rsm v r(dc) v drm v dsm v d(dc) unit symbol parameter v v v v v v voltage class repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage + non-repetitive peak off-state voltage + dc off-state voltage + maximum ratings 3000 1880 1200 20 1.7 10 6 500 10 19 1000 4000 10 120 200 6300 C40 ~ +125 C40 ~ +150 39 ~ 55 1600 a a a ka a 2 s a/ m s v v a a kw kw w w c c kn g v dm = 3375v, c s = 3.0 m f, l s = 0.4 m h, t j = 25/125 c applied for all conduction angles f = 60hz, sinewave q = 180 , t f = 78 c one half cycle at 60hz, t j = 125 c v d = 2250v, i tm = 3000a, i gm = 100a, t j = 125 c di g /d t = 50a/ m s, c s = 3 m f, r s = 5 w t w = 20 m s, f = 60hz t w = 30 m s, f = 60hz (recommended value 47kn) typical value repetitive controllable on-state current rms on-state current average on-state current surge on-state current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak reverse gate current peak forward gate power dissipation peak reverse gate power dissipation average forward gate power dissipation average reverse gate power dissipation junction temperature storage temperature mounting force required weight i tqrm i t(rms) i t(av) i tsm i 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(av) p rg(av) t j t stg symbol parameter conditions ratings unit + : v gk = C2v note1 f 3.5 ?0.2 2.2 ?0.2depth f 85 ?0.2 + 0 ?0.3 26 ?0.5 f 120max ( f 127) m3 5 0.5 2.5depth 0.4min 0.4min (6.8) f 134 ?0.4 22.5??0.5 16- f 4.5 +0.2 0 f 147 ?0.4 f 85 ?0.2 (4 )
aug.1998 on-state voltage repetitive peak reverse current repetitive peak off-state current reverse gate current critical rate of rise of off-state voltage delay time storage time peak gate turn-off current gate trigger current gate trigger voltage thermal resistance 3.5 100 150 100 3 3 4.0 1.5 0.01 1000 v tm i rrm i drm i grm d v /d t t d t s i gq i gt v gt r th(j-f) v ma ma ma v/ m s m s m s a a v c/w i t = 3000a, t j = 125 c v rm = 19v, t j = 125 c v dm = 4500v, v gk = C2v, t j = 125 c v rg = 19v, t j = 125 c v d = 2250v, t j = 125 c, v gk = C2v (expo. ware) i t = 3000a, v d = 2250v, i gm = 100a, t j = 125 c d i /d t = 500a/ m s, d ig /d t = 50a/ m s c s = 3 m s, r s = 5 w mitsubishi gate commutated turn-off thyristors FG4000HX-90DS high power inverter use press pack type electrical characteristics symbol parameter test conditions limits min typ max unit performance curves maximum on-state characteristic on-state current ( a ) on-state voltage ( v ) rated surge on-state current surge on-state current (ka) conduction time (cycles at 60hz) gate characteristics gate voltage (v) gate current (ma) maximum thermal impedance characteristic (junction to fin) thermal impedance (?/w) time (s) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j = 125? 30 24 21 18 12 3 0 9 6 15 27 10 0 23 57 10 1 23 57 10 2 10 0 23 10 0 57 10 1 23 57 10 2 23 57 10 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 10v v gt = 1.5v p fg(av) = 200w i fgm = 1000a t j = 25? i gt = 4.0a p fgm = 10kw 0.015 0 23 10 ? 57 10 ? 23 10 0 57 10 1 23 57 10 ? 23 57 10 0 0.006 0.009 0.012 0.003 i t = 3000a, v dm = 3375v, v d = 2250v d igq /d t = 6000a/ m s, c s = 3.0 m f, l s = 0.4 m h t j = 125 c junction to fin dc method : v d = 24v, r l = 0.1 w , t j = 25 c
aug.1998 mitsubishi ga te commut a ted turn-off thyrist ors FG4000HX-90DS high power inverter use press p ack type 4800 3600 3000 1800 600 0 1200 0 1200 2400 4200 300 600 900 q = 30? 60? 90? 120? 180? q 360? resistive, inductive load 130 110 100 80 60 50 1200 0 70 90 120 300 600 900 q = 30? 60? 90? 120? 180? q 360? resistive, inductive load 8000 6000 5000 3000 1000 0 2000 0 2000 4000 7000 500 1000 1500 dc 270? q = 30? 60? 90? 120? 180? 360? resistive, inductive load q 140 120 110 90 70 60 2000 0 80 100 130 500 1000 1500 q = 30? 180? dc 270? 60? 120? 90? 360? resistive, inductive load q 0 2 4 6 8 10 12 14 16 e40 0 40 80 120 160 v d = 24v r l = 0.1 w dc method igt average on-state current (a) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (rectangular wave) gate trigger current (a) junction temperature (?c) gate trigger current vs. junction temperature (maximum) turn off storage time vs. turn off current (typical) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (rectangular wave) turn off storage time t s ( m s) turn off current (a) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (single-phase half wave) fin temperature (?c) allowable fin temperature vs. average on-state current (single-phase half wave) 0 1 2 3 0.5 1.5 2.5 0 500 1500 2000 2500 3500 1000 3000 v d = 2250v v dm = 3375v d igq /d t = e6000a/ m s v rg = 19v c s = 3.0 m f l s = 0.4 m h t j = 125?c
aug.1998 mitsubishi gate commutated turn-off thyristors FG4000HX-90DS high power inverter use press pack type 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 3500 2500 3000 v d = 2250v i gm = 100a d it /d t = 300a/ m s d ig /d t = 50a/ m s c s = 3.0 m f r s = 5 w t j = 125? turn off current (a) switching energy eon (j/p) turn on current (a) turn on switching energy (maximum) switching energy eoff (j/p) turn off switching energy (maximum) 3 5 7 9 11 13 0 500 1000 1500 2000 3500 2500 3000 v d = 2250v v dm = 3375v d igq /d t = ?000a/ m s v rg = 19v c s = 3.0 m f l s = 0.4 m h t j = 125?
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